We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

1N6373-E3/54 vs 1N6373TRE3 feature comparison

1N6373-E3/54 Vishay Intertechnologies

Buy Now Datasheet

1N6373TRE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code not_compliant compliant
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min 6 V
Breakdown Voltage-Nom 6 V
Case Connection ISOLATED
Clamping Voltage-Max 7.1 V 7.5 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 5 V 5 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare 1N6373-E3/54 with alternatives

Compare 1N6373TRE3 with alternatives