1N6373TRE3
vs
1N6373-E3/4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Clamping Voltage-Max
7.5 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
5 V
5 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Pbfree Code
Package Description
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1.5KE
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
6 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Power Dissipation-Max
6.5 W
Qualification Status
Not Qualified
Technology
AVALANCHE
Terminal Finish
Tin (Sn)
Compare 1N6373TRE3 with alternatives
Compare 1N6373-E3/4G with alternatives