1N6297A vs 1N6298 feature comparison

1N6297A Semicon Components Inc

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1N6298 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMICON COMPONENTS INC TAIWAN SEMICONDUCTOR CO LTD
Package Description O-XALF-W2 O-PALF-W2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 126 V 143 V
Breakdown Voltage-Min 114 V 117 V
Breakdown Voltage-Nom 120 V 130 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 165 V 187 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 102 V 106 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD PURE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 4
JEDEC-95 Code DO-201
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED

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