1N6297A vs 1N6297 feature comparison

1N6297A Sussex Semiconductor Inc

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1N6297 International Semiconductor Inc

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SUSSEX SEMICONDUCTOR INC INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 120 V 120 V
Clamping Voltage-Max 165 V 173 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 102 V 97.2 V
Surface Mount NO NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 38 36
Package Description O-PALF-W2
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 132 V
Breakdown Voltage-Min 108 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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