1N6122USE3
vs
JAN1N6122US
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
42.4 V
|
|
| Clamping Voltage-Max |
67.8 V
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
35.8 V
|
35.8 V
|
| Surface Mount |
YES
|
YES
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
MELF
|
| Package Description |
|
MELF-2
|
| Pin Count |
|
2
|
| Breakdown Voltage-Min |
|
44.7 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
O-LELF-R2
|
| JESD-609 Code |
|
e0
|
| Non-rep Peak Rev Power Dis-Max |
|
500 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
5 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
|
|
|
Compare 1N6122USE3 with alternatives
Compare JAN1N6122US with alternatives