JAN1N6122US vs JANTXV1N6122US feature comparison

JAN1N6122US Semicoa Semiconductors

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JANTXV1N6122US Microchip Technology Inc

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Pbfree Code No
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer SEMICOA CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 44.7 V 44.7 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MELF-R2 O-LELF-R2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 2 W
Qualification Status Not Qualified Qualified
Reference Standard MIL-19500/516 MIL-19500
Rep Pk Reverse Voltage-Max 35.8 V 35.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 8 8
Rohs Code No
Package Description MELF-2
Additional Feature HIGH RELIABILITY
Clamping Voltage-Max 67.8 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reverse Current-Max 1 µA
Reverse Test Voltage 35.8 V

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