1N6108AUS vs JAN1N6108AUS feature comparison

1N6108AUS Microchip Technology Inc

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JAN1N6108AUS Bkc Semiconductors Inc

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC BKC SEMICONDUCTORS INC
Package Description HERMETIC SEALED, GLASS, D-5B, E-MELF-2
Reach Compliance Code compliant unknown
Factory Lead Time 21 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 11.4 V 11.4 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-MELF-R2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 MIL-19500/516
Rep Pk Reverse Voltage-Max 9.1 V 9.1 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 7 1
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 17.3 V

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