1N5818-1E3
vs
1N5818143
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
NXP SEMICONDUCTORS
Package Description
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
O-LALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
Application
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.6 V
JEDEC-95 Code
DO-41
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
25 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
125 °C
Output Current-Max
1 A
1 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
30 V
30 V
Surface Mount
NO
NO
Technology
SCHOTTKY
SCHOTTKY
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Qualification Status
Not Qualified
Compare 1N5818-1E3 with alternatives
Compare 1N5818143 with alternatives