1N5818
vs
CMS09(TE12L,Q)
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
TOSHIBA CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.55 V
|
0.45 V
|
| Non-rep Pk Forward Current-Max |
25 A
|
25 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Base Number Matches |
2
|
1
|
|
|
|
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