1N5811USS
vs
JAN1N5811US
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
DEFENSE LOGISTICS AGENCY
|
Package Description |
O-LELF-R2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Application |
SUPER FAST RECOVERY
|
ULTRA FAST RECOVERY POWER
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.925 V
|
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Output Current-Max |
3 A
|
6 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Qualified
|
Reverse Current-Max |
5 µA
|
|
Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
Surface Mount |
YES
|
YES
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
1
|
1
|
Reference Standard |
|
MIL-19500/477F
|
|
|
|
Compare 1N5811USS with alternatives
Compare JAN1N5811US with alternatives