1N5811USS
vs
JANTX1N5811US
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
BKC SEMICONDUCTORS INC
Package Description
O-LELF-R2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
SUPER FAST RECOVERY
FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.925 V
0.875 V
JESD-30 Code
O-LELF-R2
O-MELF-R2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
Output Current-Max
3 A
6 A
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.03 µs
0.03 µs
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
10
Additional Feature
HIGH SURGE CAPABILITY
JESD-609 Code
e0
Power Dissipation-Max
5 W
Reference Standard
MIL-19500/477
Rep Pk Reverse Voltage-Max
150 V
Terminal Finish
Tin/Lead (Sn/Pb)
Compare 1N5811USS with alternatives