1N5267-G
vs
1N5267BAR2
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
STMICROELECTRONICS
Package Description
O-XALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-XALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Voltage-Nom
75 V
75 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Voltage Tol-Max
10%
5%
Working Test Current
1.7 mA
1.7 mA
Base Number Matches
1
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Knee Impedance-Max
1700 Ω
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
0.1 µA
Voltage Temp Coeff-Max
73.5 mV/°C
Compare 1N5267-G with alternatives
Compare 1N5267BAR2 with alternatives