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1N4747AR1G vs 1N4747AA1G feature comparison

1N4747AR1G Taiwan Semiconductor

Buy Now Datasheet

1N4747AA1G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 22 Ω 22 Ω
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Voltage-Nom 20 V 20 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10 10
Voltage Tol-Max 5% 5%
Working Test Current 12.5 mA 12.5 mA
Base Number Matches 1 1
Diodes » Zener Diodes
Diodes » Zener Diodes

Compare 1N4747AR1G with alternatives

Compare 1N4747AA1G with alternatives