1N4747AA1G
vs
1N4747AB0G
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
Dynamic Impedance-Max
22 Ω
22 Ω
JESD-609 Code
e3
e3
Number of Elements
1
1
Operating Temperature-Max
150 °C
150 °C
Peak Reflow Temperature (Cel)
260
260
Power Dissipation-Max
1 W
1 W
Reference Voltage-Nom
20 V
20 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Finish
MATTE TIN
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
10
Voltage Tol-Max
5%
5%
Working Test Current
12.5 mA
12.5 mA
Base Number Matches
1
1
Case Connection
ISOLATED
JEDEC-95 Code
DO-204AL
JESD-30 Code
O-PALF-W2
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
Terminal Form
WIRE
Terminal Position
AXIAL
Compare 1N4747AA1G with alternatives
Compare 1N4747AB0G with alternatives