1N4747AA1G
vs
1N4747AB0G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
22 Ω
|
22 Ω
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
20 V
|
20 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
10
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
12.5 mA
|
12.5 mA
|
| Base Number Matches |
1
|
1
|
| Case Connection |
|
ISOLATED
|
| Polarity |
|
UNIDIRECTIONAL
|
|
|
|
Compare 1N4747AA1G with alternatives
Compare 1N4747AB0G with alternatives