1.5SE9.1 vs MA1N6270E3 feature comparison

1.5SE9.1 Semitronics Corp

Buy Now Datasheet

MA1N6270E3 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SEMITRONICS CORP MICROSEMI CORP
Package Description PLASTIC PACKAGE-2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10 V 10 V
Breakdown Voltage-Min 8.19 V 8.19 V
Breakdown Voltage-Nom 9.1 V 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V 13.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-MALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 7.4 V 7.37 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code Yes
Manufacturer Package Code CASE 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.52 W
Terminal Finish MATTE TIN

Compare 1.5SE9.1 with alternatives

Compare MA1N6270E3 with alternatives