MA1N6270E3 vs 1.5CE9.1A feature comparison

MA1N6270E3 Microsemi Corporation

Buy Now Datasheet

1.5CE9.1A Central Semiconductor Corp

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP CENTRAL SEMICONDUCTOR CORP
Package Description O-PALF-W2 DO-201, 2 PIN
Pin Count 2 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10 V 9.55 V
Breakdown Voltage-Min 8.19 V 8.65 V
Breakdown Voltage-Nom 9.1 V 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V 13.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 7.37 V 7.78 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code No
Part Package Code DO-201
JEDEC-95 Code DO-201
Reverse Current-Max 50 µA
Reverse Test Voltage 7.78 V

Compare MA1N6270E3 with alternatives

Compare 1.5CE9.1A with alternatives