Parametric results for: FDV303N under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 8

8 hits Apply

DS Breakdown Voltage-Min (1)

25 V 8

8 hits Apply

Drain Current-Max (ID) (1)

680 mA 8

8 hits Apply

Drain-source On Resistance-Max (1)

450 mΩ 8

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

R-PDSO-G3 8

8 hits Apply

e3 4

8 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 5 onsemi 2 Rochester Electronics LLC 1

8 hits Apply

1 5

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 8

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 7

8 hits Apply

-55.0 °C 2

8 hits Apply

PLASTIC/EPOXY 8

8 hits Apply

RECTANGULAR 8

8 hits Apply

SMALL OUTLINE 8

8 hits Apply

Active 2 End Of Life 1 Obsolete 4 Transferred 1

8 hits Apply

Yes 4

8 hits Apply

260 4

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

350 mW 1

8 hits Apply

350 mW 4

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply