Part Details for FDV303N-F169 by onsemi
Overview of FDV303N-F169 by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Part Details for FDV303N-F169
FDV303N-F169 CAD Models
FDV303N-F169 Part Data Attributes:
|
|
FDV303N-F169
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDV303N-F169
onsemi
N-Channel Digital FET 25V, 0.68A, 0.45Ω, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318-08 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 0.68 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.35 W | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDV303N-F169
This table gives cross-reference parts and alternative options found for FDV303N-F169. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDV303N-F169, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDV303N | N-Channel Digital FET 25V, 0.68A, 0.45Ω, 3000-REEL | onsemi | FDV303N-F169 vs FDV303N |
| FDV303N | 680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Rochester Electronics LLC | FDV303N-F169 vs FDV303N |
| FDV303ND87Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDV303N-F169 vs FDV303ND87Z |
| FDV303NL99Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDV303N-F169 vs FDV303NL99Z |
| ME2324D | Small Signal Field-Effect Transistor, 0.71A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | Force Mos Technology Co Ltd | FDV303N-F169 vs ME2324D |