Part Details for LBSS84LT1G by LRC Leshan Radio Co Ltd
Overview of LBSS84LT1G by LRC Leshan Radio Co Ltd
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for LBSS84LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5712 |
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RFQ | ||
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Quest Components | 4569 |
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$0.0303 / $0.1010 | Buy Now | |
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DISTI #
LBSS84LT1G
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Avnet Asia | Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R (Alt: LBSS84LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ | |
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Win Source Electronics | Power MOSFET F30 mAmps, 50 Volts | 1251000 |
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$0.0100 / $0.0150 | Buy Now |
Part Details for LBSS84LT1G
LBSS84LT1G CAD Models
LBSS84LT1G Part Data Attributes
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LBSS84LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
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Compare Parts:
LBSS84LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.13 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for LBSS84LT1G
This table gives cross-reference parts and alternative options found for LBSS84LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS84LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS84J22Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84J22Z |
| BSS84D11Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84D11Z |
| BSS84D10Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84D10Z |
| BSS84W | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN | Formosa Microsemi Co Ltd | LBSS84LT1G vs BSS84W |
| BSS84J14Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84J14Z |
| LBSS84LT3G | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3 | LRC Leshan Radio Co Ltd | LBSS84LT1G vs LBSS84LT3G |
| BSS84Q-13-F | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | LBSS84LT1G vs BSS84Q-13-F |
| BSS84D28Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84D28Z |
| BSS84J59Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84J59Z |
| BSS84D74Z | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fairchild Semiconductor Corporation | LBSS84LT1G vs BSS84D74Z |