Datasheets
LBSS84LT3G by: LRC Leshan Radio Co Ltd

Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3

Part Details for LBSS84LT3G by LRC Leshan Radio Co Ltd

Overview of LBSS84LT3G by LRC Leshan Radio Co Ltd

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Part Details for LBSS84LT3G

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LBSS84LT3G Part Data Attributes:

LBSS84LT3G LRC Leshan Radio Co Ltd
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LBSS84LT3G LRC Leshan Radio Co Ltd Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LESHAN RADIO CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.13 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for LBSS84LT3G

This table gives cross-reference parts and alternative options found for LBSS84LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS84LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS84J12Z Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN Fairchild Semiconductor Corporation LBSS84LT3G vs BSS84J12Z
BSS84/S62Z 130mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments LBSS84LT3G vs BSS84/S62Z
BSS84LT7G Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 onsemi LBSS84LT3G vs BSS84LT7G
BSS84D10Z Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Fairchild Semiconductor Corporation LBSS84LT3G vs BSS84D10Z
BSS84-7-F Small Signal Field-Effect Transistor, SPC Multicomp LBSS84LT3G vs BSS84-7-F
BSS84D89Z Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Fairchild Semiconductor Corporation LBSS84LT3G vs BSS84D89Z
BSS84T/R13 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 PanJit Semiconductor LBSS84LT3G vs BSS84T/R13
BSS84 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Lite-On Semiconductor Corporation LBSS84LT3G vs BSS84
BSS84_R1_00001 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET PanJit Semiconductor LBSS84LT3G vs BSS84_R1_00001
BSS84J60Z Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN Fairchild Semiconductor Corporation LBSS84LT3G vs BSS84J60Z

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