Datasheets
JAN1N914 by:

Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

Part Details for JAN1N914 by VPT Components

Overview of JAN1N914 by VPT Components

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Applications Education and Research Aerospace and Defense Electronic Manufacturing Communication and Networking

Price & Stock for JAN1N914

Part # Distributor Description Stock Price Buy
DISTI # JAN1N914
Avnet Americas Diode Switching 100V 0.2A 2-Pin DO-35 - Bulk (Alt: JAN1N914) RoHS: Not Compliant Min Qty: 794 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Bulk 0
  • 794 $1.7892
  • 800 $1.7640
  • 1,600 $1.7136
  • 4,000 $1.6758
  • 8,000 $1.6128
  • 40,000 $1.5750
  • 80,000 $1.5372
$1.5372 / $1.7892 Buy Now
DISTI # JAN1N914
TTI Diodes - General Purpose, Power, Switching MIL-PRF-19500/116 Min Qty: 400 Package Multiple: 1 Container: Bulk Americas - 0
  • 400 $2.1000
$2.1000 Buy Now
DISTI # JAN1N914
Avnet Americas Diode Switching 100V 0.2A 2-Pin DO-35 - Bulk (Alt: JAN1N914) RoHS: Not Compliant Min Qty: 794 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Bulk 0
  • 794 $1.7892
  • 800 $1.7640
  • 1,600 $1.7136
  • 4,000 $1.6758
  • 8,000 $1.6128
  • 40,000 $1.5750
  • 80,000 $1.5372
$1.5372 / $1.7892 Buy Now

Part Details for JAN1N914

JAN1N914 CAD Models

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JAN1N914 Part Data Attributes:

JAN1N914 VPT Components
Buy Now Datasheet
Compare Parts:
JAN1N914 VPT Components Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer VPT COMPONENTS
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code compliant
Factory Lead Time 26 Weeks
Additional Feature METALLURGICALLY BONDED
Breakdown Voltage-Min 100 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code DO-35
JESD-30 Code O-LALF-W2
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.075 A
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.25 W
Qualification Status Qualified
Reference Standard MIL-19500/116
Rep Pk Reverse Voltage-Max 75 V
Reverse Recovery Time-Max 0.005 µs
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL

Alternate Parts for JAN1N914

This table gives cross-reference parts and alternative options found for JAN1N914. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N914, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N914 Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, DO-35, 2 PIN Fairchild Semiconductor Corporation JAN1N914 vs 1N914
1N914-G Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GREEN, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N914 vs 1N914-G
1N914B_T50R Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, LEAD FREE PACKAGE-2 Fairchild Semiconductor Corporation JAN1N914 vs 1N914B_T50R
1N914B-13 Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35 Diodes Incorporated JAN1N914 vs 1N914B-13
1N914 Rectifier Diode, 1 Phase, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35 Microchip Technology Inc JAN1N914 vs 1N914
1N914-T50A High Conductance Fast Diode, DO-204AH (DO-35), 5000-FNFLD onsemi JAN1N914 vs 1N914-T50A
1N914-T3 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N914 vs 1N914-T3
1N914B Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35, Rectron Semiconductor JAN1N914 vs 1N914B
1N914 Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, Crimson Semiconductor Inc JAN1N914 vs 1N914
1N914B.TR 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35, DO-35, 2 PIN Fairchild Semiconductor Corporation JAN1N914 vs 1N914B.TR
Part Number Description Manufacturer Compare
1N4446 Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, Microsemi Corporation JAN1N914 vs 1N4446
1N914-GT3 Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 Sangdest Microelectronics (Nanjing) Co Ltd JAN1N914 vs 1N914-GT3
1N914-G Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GREEN, GLASS PACKAGE-2 Sensitron Semiconductors JAN1N914 vs 1N914-G
1N914 DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35, DO-35, 2 PIN, Signal Diode Toshiba America Electronic Components JAN1N914 vs 1N914
1N4446 Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35 International Semiconductor Inc JAN1N914 vs 1N4446
JANTX1N914 Rectifier Diode, 1 Element, 0.075A, 75V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 Cobham Semiconductor Solutions JAN1N914 vs JANTX1N914
1N914B_T50A Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, LEAD FREE PACKAGE-2 Fairchild Semiconductor Corporation JAN1N914 vs 1N914B_T50A
1N914TR High Conductance Fast Diode, 10000-REEL onsemi JAN1N914 vs 1N914TR
1N914B DIODE 0.15 A, SILICON, SIGNAL DIODE, DO-35, DO-35, 2 PIN, Signal Diode Toshiba America Electronic Components JAN1N914 vs 1N914B
1N4446116 DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode NXP Semiconductors JAN1N914 vs 1N4446116

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