JAN1N914 vs 1N914B feature comparison

JAN1N914 VPT Components

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1N914B Toshiba America Electronic Components

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Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer VPT COMPONENTS TOSHIBA CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 DO-35, 2 PIN
Reach Compliance Code compliant unknown
Factory Lead Time 26 Weeks
Additional Feature METALLURGICALLY BONDED
Breakdown Voltage-Min 100 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 0.62 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-XALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.075 A 0.15 A
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.25 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/116
Rep Pk Reverse Voltage-Max 75 V 100 V
Reverse Recovery Time-Max 0.005 µs 0.004 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Part Package Code DO-35
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.70
JESD-609 Code e0
Non-rep Pk Forward Current-Max 2 A
Terminal Finish Tin/Lead (Sn/Pb)

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