Datasheets
IXTP01N100D by:

Power Field-Effect Transistor,

Part Details for IXTP01N100D by Littelfuse Inc

Overview of IXTP01N100D by Littelfuse Inc

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Price & Stock for IXTP01N100D

Part # Distributor Description Stock Price Buy
DISTI # 03AH1606
Newark Mosfet, N-Ch, 1Kv, 0.4A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:400Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTP01N100D Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 327
  • 1 $7.0000
  • 25 $6.0000
  • 100 $5.0000
  • 250 $4.7100
  • 500 $4.4100
  • 1,000 $3.9700
  • 2,500 $3.7200
$3.7200 / $7.0000 Buy Now
DISTI # IXTP01N100D-ND
DigiKey MOSFET N-CH 1000V 400MA TO220AB Min Qty: 1 Lead time: 57 Weeks Container: Tube 350
In Stock
  • 1 $6.8700
  • 50 $5.4856
  • 100 $4.9082
  • 500 $4.3308
  • 1,000 $3.8977
  • 2,000 $3.6523
$3.6523 / $6.8700 Buy Now
DISTI # 3771266
element14 Asia-Pacific MOSFET, N-CH, 1KV, 0.4A, TO-220 RoHS: Compliant Min Qty: 1 Container: Each 348
  • 1 $7.1143
  • 10 $5.5333
  • 100 $4.7724
  • 500 $4.4843
  • 1,000 $4.0262
$4.0262 / $7.1143 Buy Now
DISTI # 3771266
Farnell MOSFET, N-CH, 1KV, 0.4A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 120 Weeks, 4 Days Container: Each 327
  • 1 $7.5182
  • 25 $6.4406
  • 100 $5.3755
  • 250 $5.0622
  • 500 $4.7364
  • 1,000 $4.2603
  • 2,500 $3.9972
$3.9972 / $7.5182 Buy Now

Part Details for IXTP01N100D

IXTP01N100D CAD Models

IXTP01N100D Part Data Attributes:

IXTP01N100D Littelfuse Inc
Buy Now Datasheet
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IXTP01N100D Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description TO-220, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer LITTELFUSE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.4 A
Drain-source On Resistance-Max 80 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.1 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 0.4 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTP01N100D

This table gives cross-reference parts and alternative options found for IXTP01N100D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP01N100D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTU01N100D Power Field-Effect Transistor, Littelfuse Inc IXTP01N100D vs IXTU01N100D
IXTY01N100D Power Field-Effect Transistor, Littelfuse Inc IXTP01N100D vs IXTY01N100D
IXTP01N100D Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN IXYS Corporation IXTP01N100D vs IXTP01N100D
IXTU01N100D Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN IXYS Corporation IXTP01N100D vs IXTU01N100D

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