Part Details for BUZ342 by Infineon Technologies AG
Overview of BUZ342 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for BUZ342
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | Europe - 375 |
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RFQ |
Part Details for BUZ342
BUZ342 CAD Models
BUZ342 Part Data Attributes:
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BUZ342
Infineon Technologies AG
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Datasheet
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Compare Parts:
BUZ342
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-218AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ342
This table gives cross-reference parts and alternative options found for BUZ342. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ342, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ342 | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, | Siemens | BUZ342 vs BUZ342 |
| IRFP054NPBF | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | BUZ342 vs IRFP054NPBF |
| HUF75344G3 | N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL | Fairchild Semiconductor Corporation | BUZ342 vs HUF75344G3 |
| HUF75333G3 | 56A, 55V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ342 vs HUF75333G3 |
| HUF75345G3 | Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Harris Semiconductor | BUZ342 vs HUF75345G3 |
| IRFP064PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | BUZ342 vs IRFP064PBF |
| HUF75333G3 | Power Field-Effect Transistor, 56A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Harris Semiconductor | BUZ342 vs HUF75333G3 |
| HUF75339G3 | 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ342 vs HUF75339G3 |
| HUF75337G3 | 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ342 vs HUF75337G3 |
| IRFP054PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | BUZ342 vs IRFP054PBF |