Datasheets
IRFP064PBF by:

Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRFP064PBF by International Rectifier

Overview of IRFP064PBF by International Rectifier

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Price & Stock for IRFP064PBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   50
RFQ
Quest Components 70 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 40
  • 1 $5.0400
  • 7 $3.6960
  • 21 $3.3600
$3.3600 / $5.0400 Buy Now

Part Details for IRFP064PBF

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IRFP064PBF Part Data Attributes:

IRFP064PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFP064PBF International Rectifier Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP064PBF

This table gives cross-reference parts and alternative options found for IRFP064PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP064PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP054 Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP064PBF vs IRFP054
IRFP064 Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP064PBF vs IRFP064
HUF75344G3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Rochester Electronics LLC IRFP064PBF vs HUF75344G3
HUF75339G3 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP064PBF vs HUF75339G3
IRFP054PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP064PBF vs IRFP054PBF
BUZ342 Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, Siemens IRFP064PBF vs BUZ342
Part Number Description Manufacturer Compare
BUZ342 Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, Siemens IRFP064PBF vs BUZ342
IRFP054NPBF Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRFP064PBF vs IRFP054NPBF
HUF75344G3 N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation IRFP064PBF vs HUF75344G3
HUF75333G3 56A, 55V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP064PBF vs HUF75333G3
HUF75345G3 Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Harris Semiconductor IRFP064PBF vs HUF75345G3
HUF75333G3 Power Field-Effect Transistor, 56A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Harris Semiconductor IRFP064PBF vs HUF75333G3
HUF75339G3 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP064PBF vs HUF75339G3
HUF75337G3 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP064PBF vs HUF75337G3
IRFP054PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP064PBF vs IRFP054PBF
IRFP054NPBF Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFP064PBF vs IRFP054NPBF

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