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115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8750 |
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RFQ | ||
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Bristol Electronics | 5602 |
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RFQ | ||
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Bristol Electronics | 11241 |
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RFQ | ||
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Bristol Electronics | 24038 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-236 | 653 |
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$0.0375 / $0.0600 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236 | 38 |
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$0.0700 / $0.1400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236 | 14948 |
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$0.0300 / $0.1500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236 | 4109 |
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$0.0450 / $0.1500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236 | 7000 |
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$0.3000 / $1.0000 | Buy Now |
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NexGen Digital | 5000 |
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RFQ |
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2N7002LT1
onsemi
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Datasheet
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2N7002LT1
onsemi
115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 | |
Package Description | CASE 318-08, TO-236, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE 318-08 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.115 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for 2N7002LT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002LT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N7002KA | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | KEC | 2N7002LT1 vs 2N7002KA |
2N7002-T1-E3 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | 2N7002LT1 vs 2N7002-T1-E3 |
2V7002LT3G | N-Channel Small Signal MOSFET 60V, 115mA, 7.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL, Automotive Qualified | onsemi | 2N7002LT1 vs 2V7002LT3G |
2N7002-7 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002LT1 vs 2N7002-7 |
2N7002LT7H | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | onsemi | 2N7002LT1 vs 2N7002LT7H |
2N7002TRL13 | TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal | NXP Semiconductors | 2N7002LT1 vs 2N7002TRL13 |
2N7002TA | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | 2N7002LT1 vs 2N7002TA |
2N7002 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Jiangsu Changjiang Electronics Technology Co Ltd | 2N7002LT1 vs 2N7002 |
2N7002 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | TDK Micronas GmbH | 2N7002LT1 vs 2N7002 |
2N7002T,215 | 2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin | NXP Semiconductors | 2N7002LT1 vs 2N7002T,215 |