Parametric results for: zxmn3b04n8 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 6

6 hits Apply

Drain Current-Max (ID) (2)

7.2 A 4 7.6 A 2

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G8 6

6 hits Apply

e3 5

6 hits Apply

Manufacturer (2)

Diodes Incorporated 3 Zetex / Diodes Inc 3

6 hits Apply

1 5

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

8 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 3 Transferred 3

6 hits Apply

Yes 1

6 hits Apply

260 3 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply