Parametric results for: xc17s10 under Other Memory ICs

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Manufacturer Part Number: xc17s10
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XC17S10VOG8C
Rochester Electronics LLC
Check for Price Active 95.008 kbit 1 95008X1 5 V MEMORY CIRCUIT 1 95008 95.008 k SYNCHRONOUS 5.25 V 4.75 V CMOS COMMERCIAL R-PDSO-G8 COMMERCIAL e3 70 °C 8 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 1.27 mm DUAL 1.2 mm 4.9 mm 3.9 mm ROCHESTER ELECTRONICS LLC TSOP TSOP2, 8 unknown
XC17S10XLPD8C
AMD Xilinx
Check for Price No Obsolete 95.752 kbit 1 95752X1 3.3 V 10 MHz MEMORY CIRCUIT COMMON 1 95752 95.752 k SYNCHRONOUS 3-STATE 50 µA 5 µA 3.6 V 3 V CMOS COMMERCIAL R-PDIP-T8 Not Qualified e0 1 70 °C 225 30 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.5974 mm 9.3599 mm 7.62 mm XILINX INC DIP PLASTIC, DIP-8 8 not_compliant EAR99 8542.32.00.71
XC17S100XLSO20C
Rochester Electronics LLC
Check for Price Active 781.248 kbit 1 781248X1 3.3 V MEMORY CIRCUIT 1 781248 781.248 k SYNCHRONOUS 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G20 COMMERCIAL e0 70 °C 20 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES TIN LEAD GULL WING 1.27 mm DUAL 2.65 mm 12.8 mm 7.5 mm ROCHESTER ELECTRONICS LLC SOIC SOP, 20 unknown
XC17S100APDG8I
AMD Xilinx
Check for Price Yes Yes Obsolete 781.216 kbit 1 781216X1 3.3 V CONFIGURATION MEMORY 1 781216 781.216 k SYNCHRONOUS SERIAL 3.6 V 3 V CMOS INDUSTRIAL R-PDIP-T8 Not Qualified e3 1 85 °C -40 °C 250 30 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO Matte Tin (Sn) THROUGH-HOLE 2.54 mm DUAL 4.5974 mm 9.3599 mm 7.62 mm XILINX INC DIP DIP, 8 compliant EAR99 8542.32.00.51
XC17S100APDG8C
AMD Xilinx
Check for Price Yes Yes Obsolete 781.216 kbit 1 781216X1 3.3 V CONFIGURATION MEMORY 1 781216 781.216 k SYNCHRONOUS SERIAL 3.6 V 3 V CMOS COMMERCIAL R-PDIP-T8 Not Qualified e3 1 70 °C 250 30 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO Matte Tin (Sn) THROUGH-HOLE 2.54 mm DUAL 4.5974 mm 9.3599 mm 7.62 mm XILINX INC DIP DIP, 8 compliant EAR99 8542.32.00.51
XC17S100XLPD8I
AMD Xilinx
Check for Price No Obsolete 781.248 kbit 1 781248X1 3.3 V 10 MHz MEMORY CIRCUIT COMMON 1 781248 781.248 k SYNCHRONOUS 3-STATE 50 µA 5 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDIP-T8 Not Qualified e0 1 85 °C -40 °C 225 30 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.5974 mm 9.3599 mm 7.62 mm XILINX INC DIP DIP, DIP8,.3 8 not_compliant EAR99 8542.32.00.71
XC17S10PD8I
Rochester Electronics LLC
Check for Price Active 95.008 kbit 1 95008X1 5 V MEMORY CIRCUIT 1 95008 95.008 k SYNCHRONOUS 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T8 COMMERCIAL e0 85 °C -40 °C 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.5974 mm 9.3599 mm 7.62 mm ROCHESTER ELECTRONICS LLC DIP DIP, 8 unknown
XC17S10VO8C
Rochester Electronics LLC
Check for Price Active 95.008 kbit 1 95008X1 5 V MEMORY CIRCUIT 1 95008 95.008 k SYNCHRONOUS 5.25 V 4.75 V CMOS COMMERCIAL R-PDSO-G8 COMMERCIAL e0 70 °C 8 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 1.27 mm DUAL 1.2 mm 4.9 mm 3.9 mm ROCHESTER ELECTRONICS LLC TSOP TSOP2, 8 unknown
XC17S100ASO20I
AMD Xilinx
Check for Price No No Obsolete 781.216 kbit 1 781216X1 3.3 V CONFIGURATION MEMORY COMMON 1 781216 781.216 k SYNCHRONOUS 3-STATE SERIAL 1 mA 15 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G20 Not Qualified e0 3 85 °C -40 °C 225 30 20 PLASTIC/EPOXY SOP SOP20,.4 RECTANGULAR SMALL OUTLINE YES Tin/Lead (Sn85Pb15) GULL WING 1.27 mm DUAL 2.65 mm 12.8 mm 7.5 mm XILINX INC SOIC PLASTIC, SOIC-20 20 not_compliant EAR99 8542.32.00.51
XC17S100AVOG8C
AMD Xilinx
Check for Price Yes Yes Obsolete 781.216 kbit 1 781216X1 3.3 V CONFIGURATION MEMORY COMMON 1 781216 781.216 k SYNCHRONOUS 3-STATE SERIAL 1 mA 15 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G8 Not Qualified e3 3 70 °C 260 30 8 PLASTIC/EPOXY TSOP2 SOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.2 mm 4.9 mm 3.9 mm XILINX INC TSOP PLASTIC, TSOP-8 8 compliant EAR99 8542.32.00.61