Findchips: Parametric Search Results for we512k8250cqa


Select Parts		Part Number

		WE512K8250CQA White Electronic Designs Corp
		WE512K8-250CQA White Microelectronics
		WE512K8250CQA Microsemi Corporation
		WE512K8-250CQA Mercury Systems Inc

				Most Relevant					Technical																					Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Write Cycle Time-Max (tWC)	Write Protection	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	Part Package Code	Pin Count	ECCN Code	HTS Code	Date Of Intro

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Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

10 ms

R-CDIP-T32

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.13 mm

42.4 mm

15.24 mm

WHITE ELECTRONIC DESIGNS CORP

HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

unknown

Check for Price

Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION

10000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T32

Not Qualified

125 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

DUAL

WHITE MICROELECTRONICS

unknown

Check for Price

Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

10 ms

R-CDIP-T32

Not Qualified

125 °C

-55 °C

NOT SPECIFIED

MIL-STD-883

NOT SPECIFIED

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.5 mm

DUAL

MICROSEMI CORP

HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

unknown

DIP

3A001.A.2.C

8542.32.00.51

Check for Price

Active

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

YES

10000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

8 mA

100 µA

5.5 V

4.5 V

CMOS

10 ms

HARDWARE/SOFTWARE

R-CDIP-T32

125 °C

-55 °C

MIL-STD-883

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.13 mm

42.8 mm

15.24 mm

MERCURY SYSTEMS INC

unknown

3A001.A.2.C

8542.32.00.51

2018-10-30

Compare

WE512K8250CQA

White Electronic Designs Corp

Check for Price

Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

10 ms

R-CDIP-T32

Not Qualified

125 °C

-55 °C

MIL-STD-883

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.13 mm

42.4 mm

15.24 mm

WHITE ELECTRONIC DESIGNS CORP

HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

unknown

WE512K8-250CQA

White Microelectronics

Check for Price

Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION

10000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T32

Not Qualified

125 °C

-55 °C

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

DUAL

WHITE MICROELECTRONICS

unknown

WE512K8250CQA

Microsemi Corporation

Check for Price

Transferred

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

10 ms

R-CDIP-T32

Not Qualified

125 °C

-55 °C

NOT SPECIFIED

MIL-STD-883

NOT SPECIFIED

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.5 mm

DUAL

MICROSEMI CORP

HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32

unknown

DIP

3A001.A.2.C

8542.32.00.51

WE512K8-250CQA

Mercury Systems Inc

Check for Price

Active

4.1943 Mbit

512KX8

5 V

250 ns

EEPROM MODULE

YES

10000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

8 mA

100 µA

5.5 V

4.5 V

CMOS

10 ms

HARDWARE/SOFTWARE

R-CDIP-T32

125 °C

-55 °C

MIL-STD-883

CERAMIC, METAL-SEALED COFIRED

DIP

DIP32,.6

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.13 mm

42.8 mm

15.24 mm

MERCURY SYSTEMS INC

unknown

3A001.A.2.C

8542.32.00.51

2018-10-30

Parametric results for: we512k8250cqa under EEPROMs