Parametric results for: vn10lm under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (3)

SINGLE 4 Single 1 SINGLE WITH BUILT-IN DIODE 1

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

6 hits Apply

Drain Current-Max (Abs) (ID) (1)

300 mA 1

6 hits Apply

Drain Current-Max (ID) (1)

300 mA 5

6 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 1

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

5 pF 1

6 hits Apply

TO-226AE 1

6 hits Apply

O-PBCY-T3 1

6 hits Apply

e0 5

6 hits Apply

Manufacturer (6)

Exar Corporation 1 Freescale Semiconductor 1 Motorola Semiconductor Products 1 Sipex Corporation 1 Telcom Semiconductor Inc 1 Topaz Semiconductor 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 1

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 1

6 hits Apply

ROUND 1

6 hits Apply

CYLINDRICAL 1

6 hits Apply

Obsolete 5 Transferred 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

1 W 6

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply