Parametric results for: vn10kc under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW THRESHOLD 1

15 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 15

15 hits Apply

DS Breakdown Voltage-Min (1)

60 V 15

15 hits Apply

Drain Current-Max (ID) (2)

170 mA 12 310 mA 3

Min (A) - Max (A)

15 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 15

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

5 pF 15

15 hits Apply

R-CDSO-N4 12 R-PDSO-G3 3

15 hits Apply

e4 6

15 hits Apply

Manufacturer (4)

Rochester Electronics LLC 2 TT Electronics Power and Hybrid / Semelab Limited 6 TT Electronics Resistors 6 Vishay Siliconix 1

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (2)

3 3 4 12

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

150.0 °C 12

15 hits Apply

CERAMIC, METAL-SEALED COFIRED 12 PLASTIC/EPOXY 3

15 hits Apply

RECTANGULAR 15

15 hits Apply

SMALL OUTLINE 15

15 hits Apply

Active 14 Obsolete 1

15 hits Apply

No 3 Yes 3

15 hits Apply

NOT SPECIFIED 6

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply