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UTT200N03L-TA3-T
Unisonic Technologies Co Ltd
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Composite Price
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Avalanche Energy Rating (Eas)
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Feedback Cap-Max (Crss)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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Turn-off Time-Max (toff)
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Turn-on Time-Max (ton)
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JEDEC-95 Code
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JESD-30 Code
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Package Body Material
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Package Shape
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Package Style
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Reach Compliance Code
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ECCN Code
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Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 200 A | 2.6 mΩ | 864 mJ | 233 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 178 W | 800 A | SWITCHING | SILICON | 3.2 µs | 410 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | UNISONIC TECHNOLOGIES CO LTD | compliant | EAR99 |
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UTT200N03L-TA3-T
Unisonic Technologies Co Ltd
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Check for Price Buy | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 200 A | 2.6 mΩ | 864 mJ | 233 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 178 W | 800 A | SWITCHING | SILICON | 3.2 µs | 410 ns | TO-220AB | R-PSFM-T3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | UNISONIC TECHNOLOGIES CO LTD | compliant | EAR99 |