Parametric results for: uln2804ap under Power Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 0.28 1

2 hits Apply

Collector Current-Max (IC) (1)

500 mA 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 2

2 hits Apply

Configuration (1)

8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

1000.0 2

2 hits Apply

R-PDIP-T18 2

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

8 2

2 hits Apply

Number of Terminals (1)

18 2

2 hits Apply

85.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

IN-LINE 2

2 hits Apply

Obsolete 2

2 hits Apply

No 1 Yes 1

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply