Parametric results for: tpca8a02h under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

150.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

3 hits Apply

Drain Current-Max (ID) (1)

34 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

6.7 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

S-PDSO-F5 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

5 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

SQUARE 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

End Of Life 1 Lifetime Buy 1 Obsolete 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

45 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply