Parametric results for: tpca8004h under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

208.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

40 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

6.2 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

255 pF 4

4 hits Apply

S-PDSO-F8 4

4 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

SQUARE 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

45 W 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply