Parametric results for: tn2529 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

290 V 2

2 hits Apply

Drain Current-Max (ID) (1)

410 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

S-PQCC-N14 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

14 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

CHIP CARRIER 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

2 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply