Parametric results for: tms28f008azb80bdcdq under Flash Memories

All Filters Access Time-Max Additional Feature Boot Block Command User Interface Data Polling Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 2

2 hits Apply

10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK 2

2 hits Apply

BOTTOM 2

2 hits Apply

YES 1

2 hits Apply

NO 1

2 hits Apply

10000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-G40 2

2 hits Apply

18.4 mm 2

2 hits Apply

Manufacturer (2)

Rochester Electronics LLC 1 Texas Instruments 1

2 hits Apply

Memory Density (1)

8.3886 Mbit 2

2 hits Apply

FLASH 2

2 hits Apply

Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

1,2,1,7 1

2 hits Apply

40 2

2 hits Apply

1.0486 M 2

2 hits Apply

1000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

125.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (1)

1MX8 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

TSOP 1 TSOP2 1

2 hits Apply

TSSOP40,.8,20 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE, THIN PROFILE 2

2 hits Apply

Sector Size (1)

16K,8K,96K,128K 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply