Parametric results for: sum110n10-08 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

2 hits Apply

Drain Current-Max (ID) (1)

110 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

8.5 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-263 1

2 hits Apply

R-PSSO-G2 1

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Vishay Intertechnologies 1 Vishay Siliconix 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

No 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

437.5 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply