Parametric results for: stw26nm60n. under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

100.0 mJ 1 610.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

600 V 3

3 hits Apply

Drain Current-Max (ID) (2)

20 A 2 21 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

165 mΩ 2 175 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-247 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e3 1

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

140 W 2 190 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply