Parametric results for: ssf211, under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE 2

3 hits Apply

Configuration (1)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (ID) (1)

8.5 A 1

3 hits Apply

Drain-source On Resistance-Max (2)

12.5 mΩ 1 17.3 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PDSO-F6 1 R-PDSO-G8 1

3 hits Apply

Manufacturer (1)

Suzhou Good-Ark Electronics Co Ltd 3

3 hits Apply

Number of Elements (1)

2 2

3 hits Apply

Number of Terminals (2)

6 1 8 1

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 3

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply