Parametric results for: ssf05022 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Output Current-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

79.0 mJ 1

13 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

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DS Breakdown Voltage-Min (1)

100 V 2

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Drain Current-Max (ID) (2)

2 A 1 3 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

150 mΩ 1 200 mΩ 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 2

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30 pF 1

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TO-254 4

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R-PDSO-G3 1 R-PDSO-G4 1 S-MSFM-P3 4

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e0 4

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Manufacturer (2)

Microsemi Corporation 4 Suzhou Good-Ark Electronics Co Ltd 9

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Number of Elements (1)

1 2

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Number of Terminals (2)

3 5 4 1

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ENHANCEMENT MODE 2

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150.0 °C 1

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-50.0 °C 1

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6 A 4

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METAL 4 PLASTIC/EPOXY 2

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RECTANGULAR 2 SQUARE 4

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FLANGE MOUNT 4 SMALL OUTLINE 2

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Active 9 Obsolete 4

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NOT SPECIFIED 6

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Polarity/Channel Type (1)

N-CHANNEL 2

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1.56 W 1

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Surface Mount (2)

NO 4 YES 2

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