Parametric results for: sihx12n60e under Small Signal Field-Effect Transistors

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Manufacturer Part Number: sih
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SIHLL110TR-GE3
Vishay Intertechnologies
$0.2713 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 100 V 1 1.5 A 760 mΩ AVALANCHE RATED 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W SWITCHING SILICON TO-261AA R-PDSO-G4 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay
SIHFL110TR-BE3
Vishay Intertechnologies
$0.2945 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 100 V 1 1.5 A 540 mΩ AVALANCHE RATED 150 mJ 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 12 A SWITCHING SILICON TO-261AA R-PDSO-G4 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay SOT-223, 4 PIN
SIHFL9110TR-GE3
Vishay Intertechnologies
$0.3259 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 1.1 A 1.2 Ω AVALANCHE RATED 18 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2 W 3.1 W SWITCHING SILICON TO-261AA R-PSSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay SOT-223, 3 PIN 8541.29.00.95
SIHFR220-GE3
Vishay Intertechnologies
$0.3387 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 4.8 A 800 mΩ 161 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 19 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 Vishay
SIHFR010-GE3
Vishay Intertechnologies
$0.3756 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 50 V 1 8.2 A 200 mΩ 29 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 33 A SWITCHING SILICON 53 ns 67 ns TO-252AA R-PSSO-G2 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99 DPAK-3/2
SIHFU020-GE3
Vishay Intertechnologies
$0.3856 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 14 A 100 mΩ 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 56 A SWITCHING SILICON TO-251AA R-PSIP-T3 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE VISHAY INTERTECHNOLOGY INC unknown EAR99
SIHFR9110TR-GE3
Vishay Intertechnologies
$0.4052 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 3.1 A 1.2 Ω AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 12 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay
SIHFR120-GE3
Vishay Intertechnologies
$0.4052 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 7.7 A 270 mΩ AVALANCHE RATED 210 mJ 34 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 31 A SWITCHING SILICON TO-252AA R-PSSO-G2 Not Qualified 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99 Vishay
SIHFR9014TR-GE3
Vishay Intertechnologies
$0.4052 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99
SIHFR9014-GE3
Vishay Intertechnologies
$0.4052 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 5.1 A 500 mΩ AVALANCHE RATED 140 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 20 A SWITCHING SILICON TO-252 R-PSSO-G2 Not Qualified 150 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE VISHAY INTERTECHNOLOGY INC compliant EAR99