Parametric results for: si4953dy under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

30 V 7

9 hits Apply

Drain Current-Max (ID) (1)

4.9 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

53 mΩ 8

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

R-PDSO-G8 8

9 hits Apply

e0 1 e3 3

9 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 6 Rochester Electronics LLC 1 Temic Semiconductors 1 Vishay Intertechnologies 1

9 hits Apply

1 2

9 hits Apply

Number of Elements (1)

2 8

9 hits Apply

Number of Terminals (1)

8 8

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

150.0 °C 8

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

SMALL OUTLINE 8

9 hits Apply

Active 1 Obsolete 7 Transferred 1

9 hits Apply

Yes 1

9 hits Apply

260 1

9 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 8

9 hits Apply

2 W 1

9 hits Apply

2 W 3

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply