Parametric results for: si4920dy-t1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

4 hits Apply

Drain Current-Max (ID) (1)

6.9 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G8 3

4 hits Apply

e0 1 e3 2

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

2 3

4 hits Apply

Number of Terminals (1)

8 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 4

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

2 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply