Parametric results for: si4511dy under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

6 hits Apply

Drain Current-Max (ID) (2)

4.6 A 1 7.2 A 5

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

14.5 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G8 5

6 hits Apply

e0 2 e3 2

6 hits Apply

Manufacturer (2)

Vishay Intertechnologies 3 Vishay Siliconix 3

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

2 5

6 hits Apply

Number of Terminals (1)

8 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Obsolete 6

6 hits Apply

Yes 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 6

6 hits Apply

2 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply