Parametric results for: shd2301 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

3 hits Apply

DS Breakdown Voltage-Min (2)

60 V 1 200 V 2

Min (V) - Max (V)

3 hits Apply

Drain Current-Max (ID) (2)

8.5 A 2 33 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

45 mΩ 1 520 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

S-CQCC-N28 3

3 hits Apply

e0 2

3 hits Apply

Manufacturer (1)

Sensitron Semiconductors 3

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

28 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

SQUARE 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

Active 3

3 hits Apply

No 3

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 2

3 hits Apply

36 W 1 50 W 1

Min (W) - Max (W)

3 hits Apply

36 W 1 50 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply