Parametric results for: sdf200na10heu under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 6 HIGH RELIABILITY 3

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ISOLATED 6

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Configuration (1)

COMPLEX 9

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DS Breakdown Voltage-Min (1)

100 V 9

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Drain Current-Max (ID) (1)

200 A 9

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Drain-source On Resistance-Max (1)

65 mΩ 9

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METAL-OXIDE SEMICONDUCTOR 9

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R-MDFM-P12 3 R-MDFM-T12 6

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Manufacturer (1)

Solitron Devices Inc 9

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Number of Elements (1)

6 9

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Number of Terminals (1)

12 9

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ENHANCEMENT MODE 9

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150.0 °C 9

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METAL 9

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RECTANGULAR 9

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FLANGE MOUNT 9

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Active 9

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No 9

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NOT SPECIFIED 9

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Polarity/Channel Type (1)

N-CHANNEL 9

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900 W 9

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900 W 3

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Surface Mount (1)

NO 9

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