Parametric results for: sd5001n under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW INSERTION LOSS 3

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Configuration (4)

COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE 1 COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE 2 SEPARATE, 4 ELEMENTS 1 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2

9 hits Apply

DS Breakdown Voltage-Min (1)

10 V 6

9 hits Apply

Drain Current-Max (ID) (1)

50 mA 7

9 hits Apply

Drain-source On Resistance-Max (1)

70 Ω 5

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METAL-OXIDE SEMICONDUCTOR 8

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0.5 pF 5

9 hits Apply

R-PDIP-T16 6

9 hits Apply

e3 1

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Manufacturer (6)

Calogic Inc 2 Linear Integrated Systems 2 Micross Components 1 Teledyne Technologies Inc 1 Temic Semiconductors 2 Universal Semiconductor Inc 1

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1 1

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Number of Elements (1)

4 6

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Number of Terminals (1)

16 6

9 hits Apply

ENHANCEMENT MODE 8

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85.0 °C 3 150.0 °C 3

Min (°C) - Max (°C)

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PLASTIC/EPOXY 6

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RECTANGULAR 6

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IN-LINE 6

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Active 3 Contact Manufacturer 2 Obsolete 4

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No 1 Yes 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 8

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500 mW 4

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Surface Mount (2)

NO 7 YES 1

9 hits Apply