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S26KS512SDPBHB023
Infineon Technologies AG
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Check for Price | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 166 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | SERIAL | 1.8 V | HYPERBUS | 30 µA | 80 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE | R-PBGA-B24 | 105 °C | -40 °C | AEC-Q100 | 24 | PLASTIC/EPOXY | VBGA | BGA24,5X5,40 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | INFINEON TECHNOLOGIES AG | compliant | |||||
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S26KS512SDPBHB023
Cypress Semiconductor
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Check for Price | Transferred | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 96 ns | FLASH | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B24 | 105 °C | -40 °C | AEC-Q100; TS 16949 | 24 | PLASTIC/EPOXY | VBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1 mm | 8 mm | 6 mm | CYPRESS SEMICONDUCTOR CORP | compliant | EAR99 | 8542.32.00.51 |