Parametric results for: rn1426, under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 10 1 BUILT-IN BIAS RESISTOR RATIO IS 0.1 4 BUILT-IN RESISTOR RATIO IS 10 1

6 hits Apply

Collector Current-Max (IC) (1)

800 mA 6

6 hits Apply

7 pF 1

6 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 6

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DC Current Gain-Min (hFE) (1)

90.0 6

6 hits Apply

R-PDSO-G3 6

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Manufacturer (1)

Toshiba America Electronic Components 6

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Number of Elements (1)

1 6

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Number of Terminals (1)

3 6

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

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RECTANGULAR 6

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SMALL OUTLINE 6

6 hits Apply

Active 1 Obsolete 5

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

200 mW 1

6 hits Apply

200 mW 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply

Transition Frequency-Nom (fT) (1)

300 MHz 6

6 hits Apply